Published February 14, 2014 | Version v1
Journal article

Electrical, thermal, and species transport properties of liquid eutectic Ga-In and Ga-In-Sn from first principles

  • 1. Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

Description

Using ab initio molecular dynamics, the atomic structure and transport properties of eutectic Ga-In and Ga-In-Sn are investigated. The Kubo-Greenwood (K-G) and the Ziman-Faber (Z-F) formulations and the Wiedemann-Franz (W-F) law are used for the electrical and electronic thermal conductivity. The species diffusivity and the viscosity are also predicted using the mean square displacement and the Stokes-Einstein (S-E) relation. Alloying Ga causes more disordered structure, i.e., broadening the atomic distance near the In and Sn atoms, which reduces the transport properties and the melting temperature. The K-G treatment shows excellent agreement with the experimental results while Z-F treatment formula slightly overestimates the electrical conductivity. The predicted thermal conductivity also shows good agreement with the experiments. The species diffusivity and the viscosity are slightly reduced by the alloying of Ga with In and Sn atoms. Good agreements are found with available experimental results and new predicted transport-property results are provided

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Chemical Physics
Journal Volume
140
Journal Issue
6
Journal Page Range
p. 064303-064303.8
ISSN
0021-9606
CODEN
JCPSA6

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45076324
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Descriptors DEI
ELECTRIC CONDUCTIVITY; EUTECTICS; LIQUIDS; MELTING POINTS; MOLECULAR DYNAMICS METHOD; THERMAL CONDUCTIVITY; VISCOSITY
Descriptors DEC
CALCULATION METHODS; ELECTRICAL PROPERTIES; FLUIDS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE

Optional Information

Notes
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