Published May 26, 2006 | Version v1
Journal article

NEMS fabrication of metal coated sub-wavelength size aperture array and its optical characterization

  • 1. Institute of Basic Science and Department of Chemistry and Technology, Sungkyunkwan University, Suwon, Kyunggido 440-746 (Korea, Republic of)
  • 2. Department of Physics and Advanced Materials Science, Sun Moon University, Ahsan, Chungnam 336-708 (Korea, Republic of)
  • 3. Department of Mechanical Engineering, Myongji University, Yongin, Kyunggido 449-728 (Korea, Republic of)

Description

We successfully fabricated the sub-wavelength size silicon oxide aperture array as a near-field optical probe in order to examine the possible light resonance-tunneling phenomenon. Initially, using a magnetic enhanced reactive ion etching (MERIE) system, a (50 x 50) array of the (5 x 5) m2 size patterns was fabricated on the silicon wafer followed by V-groove formation using alkaline solution Si bulk micromachining. The silicon oxide aperture array with sub-wavelength size was revealed after the water-diluted HF acid etching. The nano-size aperture on the top of the pyramidal array with an opening rate of ∼ 27 nm/min was carefully controlled with (50:1) water-diluted HF acid solution. The Al thin film was thermally evaporated on the (50 x 50) array pattern and for sub wavelength size aperture fabrication. The initial diameter greater than 300 nm of the aperture was reduced down to ∼ 100 nm. The far-field diffraction pattern was clearly observed. The optical intensity revealed the extra-ordinary amounts of the light transmission through the nano-aperture array

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.08.349;
PII
S0040-6090(05)01229-0;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
506-507
Journal Page Range
p. 225-229
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Joint meeting of 7. APCPST (Asia Pacific conference on plasma science and technology) and 17. SPSM (symposium on plasma science for materials)
Dates
29 Jun - 2 Jul 2004
Place
Fukuoka (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38004617
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ETCHING; FABRICATION; HYDROFLUORIC ACID; METALS; MICROSTRUCTURE; SILICON; SILICON OXIDES; THIN FILMS; TUNNEL EFFECT
Descriptors DEC
CHALCOGENIDES; ELEMENTS; FILMS; FLUORINE COMPOUNDS; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SURFACE FINISHING

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.