Published May 30, 2005 | Version v1
Journal article Metadata-only

Phonons in strained In1-xGaxAs/InP epilayers characterized by infrared reflectance

Creators

  • 1. National Research Council, Ottawa K1A 0R6 (Canada)

Description

Strained In1-xGaxAs epilayers over a wide range of x values from 0.252 to 0.762 have been grown by chemical beam epitaxy on heavily doped InP(100) substrates. The infrared p-polarized reflectivity of these samples has been measured and the first derivative of the reflectance has been analyzed using a specially developed fitting technique. Expressions for the variation of the phonon frequencies with Ga fraction for the InAs-like and GaAs-like modes have been obtained. The present results substantially improve on earlier results obtained from epilayers on semi-insulating substrates having a narrower concentration range around x=0.468 where In1-xGaxAs is lattice matched to InP

Additional details

Identifiers

DOI
10.1063/1.1940732;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
86
Journal Issue
22
Journal Page Range
p. 221904-221904.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37017531
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL GROWTH; DOPED MATERIALS; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INFRARED SPECTRA; LAYERS; PHONONS; REFLECTIVITY; SEMICONDUCTOR MATERIALS; SUBSTRATES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; OPTICAL PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; QUASI PARTICLES; SPECTRA; SURFACE PROPERTIES

Optional Information

Notes
(c) 2005 American Institute of Physics