Published March 1, 1986
| Version v1
Journal article
Contact resistance measurements for hydrogenated amorphous silicon solar cell structures
Description
A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin-film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 59
- Journal Issue
- 5
- Series
- J. Appl. Phys.
- Journal Page Range
- 1682-1687
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17044370
- Subject category
- S42: ENGINEERING;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; EXPERIMENTAL DATA; MEASURING METHODS; OXIDES; SILICON SOLAR CELLS; SURFACE PROPERTIES
- Descriptors DEC
- CHALCOGENIDES; DATA; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; EQUIPMENT; INFORMATION; NUMERICAL DATA; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SOLAR CELLS