Published January 2012
| Version v1
Journal article
Investigation of the vanadium doped silicon by the isothermal relaxation of capacity
Description
Diodes prepared on the basis of silicon doped by vanadium are investigated by the method of isothermal relaxation of capacity. The cross-section of electron capture and the energy of photoionization of energetic levels formed by vanadium in the n- and p-type silicon have been determined. (author)
Additional details
Additional titles
- Original title (Russian)
- Исследование кремния, легированного ванадием, методами изотермической релаксация емкости
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 14
- Journal Issue
- 1
- Journal Page Range
- p. 65-66
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 44041803
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CAPACITY; CROSS SECTIONS; DOPED MATERIALS; ELECTRON CAPTURE; N-TYPE CONDUCTORS; PHOTOIONIZATION; P-TYPE CONDUCTORS; RELAXATION; SILICON; SILICON DIODES; TEMPERATURE DEPENDENCE; VANADIUM
- Descriptors DEC
- CAPTURE; ELEMENTS; IONIZATION; MATERIALS; METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TRANSITION ELEMENTS
Optional Information
- Notes
- 5 refs., 1 figs.