Published 2002 | Version v1
Journal article Metadata-only

The elements composition of the porous silicon films prepared by chemical etching

Creators

  • 1. Inst. Yadernoj Fiziki, Almaty (Kazakhstan)

Description

The element composition of the porous silicon layers prepared by chemical etching at a different ratio of components HF/HNO3 was investigated. The distribution of elements in depth of porous material have been received by means of Rutherford backscattering method. The high concentration of carbon atoms in middle layers of a n-type porous films have been discovered. (author)

Additional details

Additional titles

Original title (Russian)
Элементный состав пленок пористого кремния, полученного химическим травлением

Publishing Information

Journal Title
Izvestiya Ministerstva Nauki Akademii Nauk Respubliki Kazakhstan. Seriya Fiziko-Matematicheskaya
Journal Volume
6
Journal Issue
6
Journal Page Range
p. 73-77
ISSN
1029-3310

INIS

Country of Publication
Kazakhstan
Country of Input or Organization
Kazakhstan
INIS RN
35029652
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHEMICAL COMPOSITION; ETCHING; FILMS; N-TYPE CONDUCTORS; POROUS MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON
Descriptors DEC
ELEMENTS; MATERIALS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTROSCOPY; SURFACE FINISHING

Optional Information

Notes
17 refs., 2 figs.