Published June 7, 1988
| Version v1
Patent
Process for CVD of tungsten
Creators
Description
A process for depositing tungsten layer on silicon is described comprising the steps of: depositing a portion of the layer on the silicon from a gas mixture comprising tungsten hexafluo; annealing the portion of the layer in a nitrogen bearing atmosphere at a temperature less than 7000C; and depositing the remainder of the layer from a gas mixture
Availability note (English)
U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.Additional details
Publishing Information
- Imprint Pagination
- vp.
- IPC:
- Int. Cl. C23C 16/08.
- IPC
- Int. Cl. C23C 16/08.
- Patent number
- US patent document 4,749,597/A/
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19099226
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- ANNEALING; CHEMICAL VAPOR DEPOSITION; FABRICATION; FLUORINE COMPOUNDS; GASES; HIGH TEMPERATURE; LAYERS; NITROGEN; SILICON; TUNGSTEN
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; ELEMENTS; FLUIDS; HALOGEN COMPOUNDS; HEAT TREATMENTS; METALS; NONMETALS; SEMIMETALS; SURFACE COATING; TRANSITION ELEMENTS