Global model for high pressure electronegative radio-frequency discharges
- 1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
- 2. Physical Electronics Laboratory ETH-Zurich, 8093 Zurich (Switzerland)
- 3. Lam Research Corporation, Fremont, California 94538 (United States)
Description
We develop a global model for high pressure (0.1 endash 1 Torr) electronegative rf discharges and apply it to model a capacitively driven plasma etcher. The molecular gases considered consist of either pure chlorine species or a mixture of chlorine and helium species. The charged and neutral heavy particle densities together with the electron density and electron temperature are calculated by using the equations of particle balance and power balance for the input discharge parameters rf power or rf current, inlet pressure, gas flow rates, reactor diameter, and gap spacing. The power is deposited in the electrons via ohmic heating and in those ions accelerated across the dc sheath potential. The voltage across the sheath is calculated self-consistently with the densities and the electron temperature by using a collisional Child law sheath model. Analytic scaling laws for the dependence of charged and neutral particle densities, electron temperature, rf voltage and current, sheath width, and plasma impedance on pressure and absorbed rf power are presented and used to explain the numerical results obtained from the global model. The model results are compared to recent experimental measurements in a chlorine discharge over a range of absorbed power Pabs=20 endash 180W at an inlet pressure pin=0.4 Torr and a range of pressure 0.1 endash 1.6 Torr with a fixed input power of 100 W. We obtain reasonable agreement for Pabs<200W and for 0.2 Torr<pin<1Torr. copyright 1997 American Vacuum Society
Additional details
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Journal Volume
- 15
- Journal Issue
- 1
- Journal Page Range
- p. 113-126.
- ISSN
- 0734-2101
- CODEN
- JVTAD6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28038461
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRON DENSITY; ELECTRON TEMPERATURE; ELECTRONEGATIVITY; ETCHING; HIGH-FREQUENCY DISCHARGES; MATERIALS PROCESSING REACTORS; MATHEMATICAL MODELS; PLASMA HEATING; PLASMA SHEATH
- Descriptors DEC
- ELECTRIC DISCHARGES; HEATING; IRRADIATION REACTORS; REACTORS