Phase formation and characterization of Sr3Y2Ge3O12, Sr3In2Ge3O12, and Ca3Ga2Ge3O12 doped by trivalent europium
- 1. University of Applied Sciences Muenster, Fachbereich Chemieingenieurwesen, Stegerwaldstrasse 39, Anorganische Chemie/Angewandte Ma., D-48565 Steinfurt (Germany)
Description
This work reports on the phase formation during a solid-state reaction of Eu3+-doped garnets with the general formula A3B2Ge3O12 (A=Ca, Sr and B=Ga, In, Y) and their luminescent properties. It is shown by XRD and DTA/TG experiments that the garnet-phase formation is completed at 1100-1200 deg. C. Moreover, it turned out that the position of the oxygen to europium charge-transfer band and the intensity of the forbidden 4f-4f transitions of Eu3+ is dependent on the covalent interaction between the Eu3+ activator and the surrounding oxygen anions. The investigated red-emitting luminescent materials show high lumen equivalents and deep red emission at the same time, which makes them attractive for the application in LEDs (light emitting diodes), in particular for near UV-emitting LEDs
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2008.03.022Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2008.03.022;
- PII
- S0022-2313(08)00103-8;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 128
- Journal Issue
- 10
- Journal Page Range
- p. 1649-1654
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40017001
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CALCIUM COMPOUNDS; DIFFERENTIAL THERMAL ANALYSIS; DOPED MATERIALS; EUROPIUM IONS; GALLIUM COMPOUNDS; GERMANIUM COMPOUNDS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; LUMINESCENCE; OPTICAL PROPERTIES; OXIDES; STRONTIUM COMPOUNDS; SYNTHESIS; TEMPERATURE RANGE 1000-4000 K; X-RAY DIFFRACTION; YTTRIUM COMPOUNDS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; EMISSION; IONS; MATERIALS; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE; THERMAL ANALYSIS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.