Published August 1, 2018 | Version v1
Journal article

Growth of high-quality perovskite (110)-SrIrO3 thin films using reactive molecular beam epitaxy

  • 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China)
  • 2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031 (China)

Description

Recently, 5d transition metal iridates have been reported as promising materials for the manufacture of exotic quantum states. Apart from the semimetallic ground states that have been observed, perovskite SrIrO3 is also predicted to have a lattice-symmetrically protected topological state in the (110) plane due to its strong spin–orbit coupling and electron correlation. Compared with non-polar (001)-SrIrO3, the especial polarity of (110)-SrIrO3 undoubtedly adds the difficulty of fabrication and largely impedes the research on its surface states. Here, we have successfully synthesized high-quality (110)-SrIrO3 thin films on (110)-SrTiO3 substrates by reactive molecular beam epitaxy for the first time. Both reflection high-energy electron diffraction patterns and x-ray diffraction measurements suggest the expected orientation and outstanding crystallinity. A (1 × 2) surface reconstruction driven from the surface instability, the same as that reported in (110)-SrTiO3, is observed. The electric transport measurements uncover that (110)-SrIrO3 exhibits a more prominent semimetallic property in comparison to (001)-SrIrO3. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/27/8/088103

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
27
Journal Issue
8
Journal Page Range
[4 p.]
ISSN
1674-1056