Published April 25, 2016 | Version v1
Journal article Metadata-only

High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

Creators

  • 1. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan (China)
  • 2. Department of Electronic Engineering, National Changhwa University of Education, Changhwa 500, Taiwan (China)

Description

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

Additional details

Identifiers

DOI
10.1063/1.4948251;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
108
Journal Issue
17
Journal Page Range
vp.
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48036189
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM ARSENIDES; BYPASSES; ELECTRON MOBILITY; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; MAGNETORESISTANCE; METALS; QUANTUM WELLS; SUBSTRATES; TRANSISTORS; TWO-DIMENSIONAL SYSTEMS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MOBILITY; NANOSTRUCTURES; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES

Optional Information

Notes
(c) 2016 Author(s)