Technology of therbium monotelluride nanofilms
Description
Monochalcogenides of rare-earth elements have interesting magnetic, optical, thermal, mechanical and other properties, but not all compounds of this class are studied rather fully. TbTe belongs to such little-studied materials. The purpose of the presented work was to develop the technology of TbTe nanofilms preparation. 0.2 - 0.8 μm thick, 6 mm long and 4 mm wide TbTe films were prepared by vacuum-thermal evaporation from two independent sources of Tb and Te. Evaporation of terbium was carried out electronically by electron-beam evaporation and tellurium by the Joule evaporator. In the course of a dusting temperature of the evaporator of terbium equaled 1600 K, and a tellurium - 780 K. Distances from Tb and Te evaporators to a substrate made respectively 22 mm and 43 mm. Speed of a dusting of films was equal to 55 Å / s. Temperature of a substrate changed within 720 - 1150 K. As substrates we used glass-ceramic, fused silica, sappire and (111) - oriented single-crystal silicon plates. Optimum temperature of a substrate is 1110 K, above this temperature the besieged atoms come off a substrate, and below the temperature the adsorbed atoms create islands of various thickness. According to the x-ray analysis a film had structure of NaCl type with lattice constant 6.10 Å and according to the X-ray microanalysis films contained 50.1 at. % of Tb and 49.9 at. % Te. The picture of TbTe surface has been removed by electronic-scanning microscope. This process has shown that the film contains characteristic elements with the size range within 24 - 49 nm, that allows to draw a conclusion that we have nano-dimensional object. (author)
Additional details
Publishing Information
- Journal Title
- Nano Studies
- Journal Issue
- no.2016
- Journal Page Range
- p. 88
- ISSN
- 1987-8826
Conference
- Title
- 4. International Conference ''Nanotechnologies''
- Acronym
- Nano-2016
- Dates
- 24-27 Oct 2016
- Place
- Tbilisi (Georgia)
INIS
- Country of Publication
- Georgia
- Country of Input or Organization
- Georgia
- INIS RN
- 54059810
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMS; CERAMICS; ELECTRON BEAMS; EVAPORATION; EVAPORATORS; GLASS; ISLANDS; LATTICE PARAMETERS; MICROANALYSIS; MICROSCOPES; MONOCRYSTALS; NANOFILMS; PLATES; SILICA; SILICON; SODIUM CHLORIDES; TELLURIUM; TERBIUM; X RADIATION
- Descriptors DEC
- ALKALI METAL COMPOUNDS; BEAMS; CHLORIDES; CHLORINE COMPOUNDS; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; HALIDES; HALOGEN COMPOUNDS; IONIZING RADIATIONS; LEPTON BEAMS; MATERIALS; METALS; MINERALS; NANOMATERIALS; OXIDE MINERALS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; RADIATIONS; RARE EARTHS; SEMIMETALS; SODIUM COMPOUNDS; SODIUM HALIDES; THIN FILMS
Optional Information
- Notes
- 3 refs.