Published September 15, 2010 | Version v1
Journal article Metadata-only

A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

Creators

  • 1. INQUIMAE-DQIAyQF, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon II, C1428EHA Buenos Aires (Argentina)
  • 2. LTF, Instituto de Fisica, Sao Carlos, USP, P.O. Box 369, Sao Carlos 13560-250 (Brazil)
  • 3. Instituto de Fisica Gleb Wataghin, UNICAMP, 13083-970 Campinas, Sao Paulo (Brazil)

Description

A comprehensive study of nonstoichiometry titanium oxide thin films (TiOx, 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO2 particles during coalescence.

Additional details

Identifiers

DOI
10.1063/1.3481442;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
108
Journal Issue
6
Journal Page Range
p. 064912-064912.8
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42069921
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; COALESCENCE; CONCENTRATION RATIO; CRYSTAL STRUCTURE; ENERGY BEAM DEPOSITION; ENERGY GAP; FOURIER TRANSFORMATION; INFRARED SPECTRA; ION BEAMS; MORPHOLOGY; PHASE TRANSFORMATIONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; THIN FILMS; TITANIUM OXIDES; ULTRAVIOLET RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
BEAMS; CHALCOGENIDES; DEPOSITION; DIMENSIONLESS NUMBERS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; FILMS; INTEGRAL TRANSFORMATIONS; LASER SPECTROSCOPY; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; RADIATIONS; SPECTRA; SPECTROSCOPY; SURFACE COATING; TITANIUM COMPOUNDS; TRANSFORMATIONS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2010 American Institute of Physics