Simulation analysis of ion scattering spectra

Backscattering analysis using fast light ions provides the information about elemental depth profiles nondestructively. In addition, an ion shadowing effect enables us to determine the atomic configurations at surfaces and interfaces. Computer simulation of ion trajectories makes it possible to extract detailed information about surface and interface structures quantitatively. This paper represents how to analyze ion channeling spectra by Monte Carlo simulations and shows the structural analysis of Er-sheet-doped GaAs(100) as an application. The simulation analysis reveals the formation of fine clusters of single crystal ErAs, the lattice matching/mismatching and the cluster size and shape quantitatively. (author)