Published October 1, 1984 | Version v1
Journal article Metadata-only

Ion implantation into Nb/Nb oxide/PbAuIn Josephson tunnel junctions

Creators

  • 1. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

Description

Boron ions have been implanted into complete planar and edge Nb/Nb oxide/PbAuIn Josephson tunnel junctions to directly trim the Josephson current I0. Implantation caused reproducible increases in I0 and in the junction subgap conductance and decreases in the junction energy gap voltage V/sub g/. The variations in junction properties were monotonic with 11B implant dose. Trimming of I0 was optimized when the 11B ions were implanted with the depth distribution peaked near the tunnel barrier

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
45
Journal Issue
7
Series
Appl. Phys. Lett.
Journal Page Range
796-798
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
16027683
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BORON IONS; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GOLD COMPOUNDS; INDIUM COMPOUNDS; ION IMPLANTATION; JOSEPHSON JUNCTIONS; LEAD; LEAD COMPOUNDS; LEAD OXIDES; NIOBIUM; NIOBIUM OXIDES; OPTIMIZATION; PHYSICAL RADIATION EFFECTS; TUNNEL EFFECT
Descriptors DEC
ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; IONS; METALS; NIOBIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS