Study on the effects arising in PbTe under high-dose ion implantation

α coefficients of optical absorption and S coefficients of thermal e.m.f. in PbTe implanted with zinc ions by 6.25x1013 - 1.25x1017 cm-12 dose are analyzed in detail. Block-monocrystal PbTe films grown on KBr substrates were used as objects of investigation. Spectral dependence α(hω) of ion-implanted PbTe at 300 K, variations of PbTe energy scheme and dependences of s coefficient and other parameters with increasing dose of implanted zinc are analyzed. The performed investigations show that ion implantation of PbTe by high Zn+ doses is accompanied with formation of point defects, their complexes and solid solutions