Propagation of Nd-laser pulses through crystalline silicon wafers

Propagation of pulses from an Nd:YAG laser (wavelength, 1.064 μm; pulse duration, 270 ns; pulse energy, 225 μJ) through crystalline silicon wafers is studied experimentally. Mathematical modelling of the process is performed: the heat conduction equation is solved numerically, the temperature dependences of the absorption and refraction of a substance, as well as generation of nonequilibrium carriers by radiation are taken into account. The constructed model satisfactorily explains the experimentally observed intensity oscillations of transmitted radiation. (interaction of laser radiation with matter)