Atomic structure of the GaAs(1-bar1-bar3-bar)B(8x1) surface reconstruction
Creators
- 1. Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin (Germany)
Description
Atomically resolved scanning tunneling microscopy and low-energy electron diffraction were used to determine the surface structure of the GaAs(1-bar1-bar3-bar)B surface prepared by molecular beam epitaxy. An (8x1) reconstruction was found, which forms by exchanging Ga and As atoms analogously to the GaAs(113)A(8x1) reconstruction proposed by Wassermeier et al. [Phys. Rev. B 51, 14 721 (1995)]. The characteristic components of the A and B (8x1) surface reconstructions are dimers forming zigzag chains along [3-bar3-bar2] in two atomic levels. While on the A surface the dimers are built of As atoms, on the B surface Ga atoms form the dimers. The morphology of the GaAs(1-bar1-bar3-bar)B(8x1) surface is rather smooth and does not show the typical roughness known for the GaAs(113)A(8x1) surface
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.62.9969;
- PII
- S0163-1829(00)02739-9;
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 62
- Journal Issue
- 15
- Journal Page Range
- p. 9969-9972
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35071681
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIMERS; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; ROUGHNESS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; MICROSCOPY; PNICTIDES; SCATTERING; SURFACE PROPERTIES
Optional Information
- Notes
- (c) 2000 The American Physical Society