Published March 31, 2014
| Version v1
Patent
pInP-nCdS structure growth method
Description
This invention relates to semiconductor technology and can be used for manufacturing solar radiation-to-electric energy converters. The pInP-nCdS structure growth method comprises placing a pre-etched pInP substrate with the crystallographic orientation (100) and disorientation of 3...5 degrees Celsius in the direction (110) into a reactor, heating the substrate growth zone and stabilizing the temperature in the range of 400...450 degrees Celsius , spraying, in open oxygen flow, the CdCl2 and SnSl4 solutions with the formation on the substrate of a Cd2SnO4 layer, then spraying the CdCl2 and CS(NH2)2 solutions with the formation thereon of a nCdS layer.
Availability note (English)
Available at http://www.db.agepi.md/inventions/Details.aspx?id=a%202013%200062&linkPdf=/brevet/Acordare/a%202013%200062.pdfAdditional details
Additional titles
- Original title (Romanian)
- Procedeu de crestere a structurii pInP-nCdS
Identifiers
Publishing Information
- Imprint Pagination
- 4 p.
- IPC:
- Int. Cl. H01L 21/04; H01L 21/20; H01L 31/0236
- IPC
- Int. Cl. H01L 21/04; H01L 21/20; H01L 31/0236
- Patent number
- MD patent document 4280/B1/
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 45083434
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- CADMIUM COMPOUNDS; CADMIUM SELENIDES; CRYSTAL GROWTH; DIRECT ENERGY CONVERTERS; HEATING; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; LAYERS; PHOSPHORUS COMPOUNDS; SELENIUM COMPOUNDS; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SELENIDES; SELENIUM COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Notes
- 2 refs.
- Secondary number(s)
- MD patent application a/2013/0062