Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(1 1 1)7 x 7 surface
- 1. Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India)
- 2. Surface Physics and Nanostructures Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)
Description
Lead (Pb) has been a prototypical system to study diffusion and reconstruction of silicon surfaces. However, there is a discrepancy in literature regarding the critical coverage at which island formation takes place in the Stranski-Krastanov (S-K) mode. We address this issue by studying the initial stages of evolution of the Pb/Si(1 1 1)7 x 7 system by careful experiments in ultra-high vacuum with in situ characterization by auger electron spectroscopy, electron energy loss spectroscopy and low-energy electron diffraction. We have adsorbed Pb onto clean Si(1 1 1 )7 x 7 surface with sub-monolayer control at different flux rates of 0.05 ML/min, 0.14 ML/min and 0.22 ML/min, at room temperature. The results clearly show that the coverage of the Pb adlayer before the onset of 3D Pb islands in the S-K mode depends on the flux rates. LEED results show the persistence of the (7 x 7) substrate reconstruction until the onset of the island formation, while EELS results do not show any intermixing at the interface. This suggests that the flux rates influence the kinetics of growth and the passivation of dangling bonds to result in the observed rate-dependent adlayer coverages.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2009.08.064Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2009.08.064;
- PII
- S0169-4332(09)01201-X;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 256
- Journal Issue
- 2
- Journal Page Range
- p. 576-579
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 2. international conference on physics at surfaces and interfaces
- Acronym
- PSI2009
- Dates
- 23-27 Feb 2009
- Place
- Puri (India)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44018238
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; DIFFUSION; ELECTRON DIFFRACTION; ELECTRONS; ENERGY-LOSS SPECTROSCOPY; EPITAXY; INTERFACES; LAYERS; LEAD; PASSIVATION; SILICON; SUBSTRATES; SUPERCONDUCTIVITY; SURFACES; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; METALS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.