Published May 1986 | Version v1
Journal article Metadata-only

Effect of electron irradiation on the characteristics of p-InSb injection photodiodes

Creators

  • 1. Odesskij Gosudarstvennyj Univ. (Ukrainian SSR)

Description

Effect of electron irradiation on the volt-ampere characteristics and photosensitivity of injection photodiodes on germanium-alloyed p-InSb basis with heavy hole concentration 1012-1013 is studied. It is shown that as a result of electron irradiation transition voltage per negative differential resistance section is increased due to decrease of carrier mobility, i.e. decrease of their pulling depth

Additional details

Additional titles

Original title (Russian)
Влияние электронного облучения на характеристики инжекционных фотодиодов из п-InSb

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
20
Journal Issue
5
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
927-929
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
18006892
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ANTIMONIDES; ELECTRON BEAMS; HALL EFFECT; INDIUM COMPOUNDS; MEDIUM TEMPERATURE; MEV RANGE 01-10; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; PHOTODIODES; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE
Descriptors DEC
ANTIMONY COMPOUNDS; BEAMS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY RANGE; LEPTON BEAMS; MATERIALS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS

Optional Information

Notes
For English translation see the journal Soviet Physics - Semiconductors (USA).