Published March 1, 2013 | Version v1
Journal article

Ba2NaNb5O15 thin film formed by electron cyclotron resonance plasma sputtering

  • 1. National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan)
  • 2. Center for Interdisciplinary Research, Tohoku University, 6-3 Aramaki-Aoba, Aoba-ku, Sendai 980-8578 (Japan)

Description

Ba2NaNb5O15 (BNN) thin films were formed on sapphire (0001) substrates and magnesium oxide substrates using electron cyclotron resonance plasma sputtering. The BNN films were 7.2–8.4 μm thick and had atomic ratio compositions of Ba=2.0–2.1/5Nb and Na=0.9–1.1/5Nb. The films had no cracks. Single-phase BNN and (001)-oriented BNN films on sapphire (0001) were obtained at 823 K and 923 K. An in-plane-oriented BNN film on sapphire (0001) was formed at 923 K. The films were transparent and had the ability of second harmonic generation. The films on magnesium oxide (100) were also single-phase BNN, and (001)-oriented BNN films were obtained at 823 K, 873 K, and 923 K. An in-plane-oriented BNN film on magnesium oxide (100) was formed at 823 K. The films were transparent.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/417/1/012066

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
417
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
15. international conference on thin films
Acronym
ICTF-15
Dates
8-11 Nov 2011
Place
Kyoto (Japan)