Energetics, electronic structure and local magnetism of single 3d impurity in GaAs
Creators
Description
A real-space first-principles method based on density functional theory has been used to study the energetics, the electronic structure and the magnetic property of single 3d impurity in a GaAs host (with Ga substituted by Cr, Mn, Fe, Co, and Ni, respectively). It is found that Mn exhibits the largest exchange splitting in 3d orbitals, while Fe, Co, and Ni are almost nonmagnetic. The calculated substitutional formation energies are 3.87, 3.21, 1.36, 1.41, 0.37 eV, and the calculated local magnetic moments are 3.25, 4.26, -0.01, -0.03 and -0.01 μB, for Cr, Mn, Fe, Co and Ni, respectively. For a good understanding on the local magnetism of the 3d impurity, we analyzed the bonding characteristics and the charge transfer property in detail, and found that the hybridizations between 3d impurity and its neighboring As atoms play an important role
Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2004.03.003;
- PII
- S0375960104003226;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 324
- Journal Issue
- 2-3
- Journal Page Range
- p. 247-253
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36089179
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMS; BONDING; CHROMIUM; COBALT; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; EV RANGE 01-10; GALLIUM ARSENIDES; HYBRIDIZATION; IMPURITIES; IRON; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETISM; MANGANESE; NICKEL
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; ELEMENTS; ENERGY RANGE; EV RANGE; FABRICATION; GALLIUM COMPOUNDS; JOINING; MATERIALS; METALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENTS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.