Radiation induced deuterium absorption for RB-SiC, HP-SiC, silicon and graphite loaded during electron irradiation

Highlights: • Radiation enhanced deuterium absorption occurs for RB-SiC. • This type of radiation enhanced absorption is related to Si rather than to C. • Most of the radiation induced absorbed deuterium is released at about the foreseen blanket operation temperature. - Abstract: Absorption, diffusion, and desorption of hydrogen isotopes are expected to occur during operation in future fusion reactors and these processes will strongly depend on the irradiation conditions, neutron flux and purely ionizing radiation. The main aim of the work is to address the electron irradiation induced absorption of hydrogen isotopes in RB-SiC. Deuterium loading was carried out with both the sample and the surrounding deuterium gas exposed to 1.8 MeV electron irradiation in order to evaluate the radiation enhanced deuterium absorption. Thermo stimulated desorption (TSD) measurements were carried out for both electron irradiated and unirradiated samples in order to evaluate the possible radiation enhanced retention of the previously loaded deuterium. The materials subjected to the deuterium loading process were also studied by SIMS. Noticeable radiation enhanced deuterium absorption was observed. Most of the deuterium absorbed during irradiation was thermally released at about 600 °C