Published June 2009 | Version v1
Journal article

Giant enhancement of material damage associated to electronic excitation during ion irradiation: The case of LiNbO3

  • 1. Instituto de Microelectronica de Madrid (CNM), CSIC, 28760 Tres Cantos (Spain)
  • 2. Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)
  • 3. Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain)
  • 4. Laboratory of Synchrotron Light (CELLS), 08193 Bellaterra (Spain)
  • 5. Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)
  • 6. Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid (Spain)

Description

The structural damage induced by ion irradiation on dielectric materials and associated device degradation has been, so far, explained on the basis of collisional processes mostly ignoring the electronic excitation. Recent work, focused on lithium niobate, offers conclusive evidence that at high ion energy and moderate mass (A≥15) electronic excitation may induce a giant enhancement over the damage rate due to nuclear collisions. As a consequence the material becomes amorphized at irradiation fluences far below those required for nuclear collisions alone. These results are expected to have a deep impact on many technologies including storage of radioactive waste, radiation-resistant materials for fusion reactors, lifetime of components and devices in space missions, nano-patterning in electronics and photonics, and possibly heavy-ion therapy in medicine. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.200824409

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science
Journal Volume
206
Journal Issue
6
Journal Page Range
p. 1109-1116
ISSN
1862-6300

Optional Information

Notes
With 4 figs., 0 tabs., 56 refs.; SICI: 0031-8965(200906)206:6<1109::AID-PSSA200824409>3.0.TX;2-F