Effect of Ca doping on the properties of Sr2Bi4Ti5O18 ferroelectric thin films
Creators
- 1. Shandong Jianzhu University, Co-Innovation Center for Green Building of Shandong Province (China)
- 2. Jinan Jingheng Yamada Electronic Precision Technology Co., Ltd (China)
- 3. Shandong Jianzhu University, School of Materials Science and Engineering (China)
- 4. Shandong Women's University (China)
Description
This study examined the effect of Ca doping on the properties of Sr2Bi4Ti5O18 (SBTi) ferroelectric thin films. According to the results of the study, the performance of SBTi thin films are improved by suitable Ca doping. It can be seen from XRD analysis, all of the thin films formed a bismuth layered perovskite structure without other impure phases. SEM shows that the sample with a doping content of 10 mol% has good crystallization, uniform grain size and good film density. Compared with the characteristics of other films, the thin film sample with 10 mol% Ca shows high crystallinity, the lowest Ti3+ content, the lowest oxygen vacancy concentration, and with the large remanent polarization 2Pr = 33.5 μC/cm2, the double coercive field 2Ec = 182.8 kV/cm; furthermore, the leakage current density is 1.67 × 10−7 A/cm2. The film sample doped with 10 mol% Ca also displays better dielectric properties, with a larger dielectric constant (εr = 795) and lower dielectric loss (tanδ = 0.03) when the test frequency is 105 Hz. The dielectric tunability T = 18.6% at 200 kV/cm and 500 kHz.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 30
- Journal Issue
- 14
- Journal Page Range
- p. 13434-13444
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52024360
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CURRENT DENSITY; DIELECTRIC PROPERTIES; DOPED MATERIALS; FERROELECTRIC MATERIALS; GRAIN SIZE; LEAKAGE CURRENT; SCANNING ELECTRON MICROSCOPY; TANTALUM NITRIDES; THIN FILMS; TITANIUM IONS; X-RAY DIFFRACTION
- Descriptors DEC
- CHARGED PARTICLES; COHERENT SCATTERING; CURRENTS; DIELECTRIC MATERIALS; DIFFRACTION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; FILMS; IONS; MATERIALS; MICROSCOPY; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SCATTERING; SIZE; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature