Published July 30, 2019 | Version v1
Journal article

Effect of Ca doping on the properties of Sr2Bi4Ti5O18 ferroelectric thin films

  • 1. Shandong Jianzhu University, Co-Innovation Center for Green Building of Shandong Province (China)
  • 2. Jinan Jingheng Yamada Electronic Precision Technology Co., Ltd (China)
  • 3. Shandong Jianzhu University, School of Materials Science and Engineering (China)
  • 4. Shandong Women's University (China)

Description

This study examined the effect of Ca doping on the properties of Sr2Bi4Ti5O18 (SBTi) ferroelectric thin films. According to the results of the study, the performance of SBTi thin films are improved by suitable Ca doping. It can be seen from XRD analysis, all of the thin films formed a bismuth layered perovskite structure without other impure phases. SEM shows that the sample with a doping content of 10 mol% has good crystallization, uniform grain size and good film density. Compared with the characteristics of other films, the thin film sample with 10 mol% Ca shows high crystallinity, the lowest Ti3+ content, the lowest oxygen vacancy concentration, and with the large remanent polarization 2Pr = 33.5 μC/cm2, the double coercive field 2Ec = 182.8 kV/cm; furthermore, the leakage current density is 1.67 × 10−7 A/cm2. The film sample doped with 10 mol% Ca also displays better dielectric properties, with a larger dielectric constant (εr = 795) and lower dielectric loss (tanδ = 0.03) when the test frequency is 105 Hz. The dielectric tunability T = 18.6% at 200 kV/cm and 500 kHz.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Materials Science. Materials in Electronics
Journal Volume
30
Journal Issue
14
Journal Page Range
p. 13434-13444
ISSN
0957-4522
CODEN
JSMEEV

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Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature