Published January 2016
| Version v1
Journal article
Determination of the density of silicon-nitride thin films by ion-beam analytical techniques (RBS, PIXE, STIM)
- 1. Hungarian Academy of Sciences, Debrecen (Hungary). Institute for Nuclear Research
Description
This work presents the investigation of some commercially available and commonly used Si3N4 foils prepared with LPCVD technique. The density and the stoichiometry of these films were determined by Rutherford backscattering spectroscopy and profilometry, while the study of impurities was achieved with particle induced X-ray emission method. It was found that the density of the studied Si3N4 films is significantly less (∼2.71 g cm-3), while the stoichiometry is close to the values of the bulk material. The results were verified by measuring the ion energy loss through the films by scanning transmission ion microscopy. (author)
Additional details
Publishing Information
- Journal Title
- Journal of Radioanalytical and Nuclear Chemistry
- Journal Volume
- 307
- Journal Issue
- 1
- Journal Page Range
- p. 341-346
- ISSN
- 0236-5731
- CODEN
- JRNCDM
INIS
- Country of Publication
- Hungary
- Country of Input or Organization
- Hungary
- INIS RN
- 47011176
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; DENSITY; ION MICROSCOPY; PIXE ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDES; STOICHIOMETRY; THIN FILMS
- Descriptors DEC
- CHEMICAL ANALYSIS; CHEMICAL COATING; DEPOSITION; FILMS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; NONDESTRUCTIVE ANALYSIS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SPECTROSCOPY; SURFACE COATING; X-RAY EMISSION ANALYSIS
Optional Information
- Notes
- 24 refs.