Low level radiation testing of micro-electronic components. Pt. 1

A review of the existing literature has been carried out, dealing with the current technology relating to low level radiation testing of microelectronic devices, as used in space satellite systems. After consideration of the space radiation environment, the general effects of cosmic radiation on MOSFET structures and other MOS devices have been assessed. The important aspect of annealing phenomena in relation to gamma-ray induced damage has also been reviewed in detail. The experimental and theoretical aspects of radiation testing have been assessed, with particular reference to the Harwell LORAD low level irradiation test facility. In addition, a review of modern dosimetry methods has been carried out, with specific regard to the problems of accurately measuring low radiation fields (1 to 10 R/hour) over periods of many months. Finally, a detailed account of the proposed experimental programme to be carried out in the LORAD facility is presented, and aspects of the experimental set-up discussed. The particular types of test circuits to be studied are dealt with, and full consideration is given to the various CMOS memory devices of special interest in the ESA space satellite programme. (author)