Published 1981
| Version v1
Book
Ion implantation in Bridgman and LEC semi-insulating GaAs for FET's
- 1. Laboratoires d'Electronique et de Physique Appliquee, Limeil-Brevannes (France)
- 2. La Radiotechnique Compelec (RTC), 14 - Caen (France)
Description
An objective comparison of the properties of the crystals obtained by two methods, namely horizontal gradient freeze (HGF) and liquid encapsulated Czochralski (LEC) pulling is reported. Crystallographic and electrical properties and ion implantation results are described for undoped, chromium doped or Cr-O, Cr-Si doped HGF and LEC crystals. Characteristics of devices fabricated by direct implantation in selected bulk crystals are reported. (author)
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- Bristol
- ISBN
- 0 85498 147 0
- Imprint Title
- Gallium arsenide and related compounds, 1980.
- Imprint Pagination
- 753 p.
- Journal Issue
- no. 56
- Series
- Institute of Physics Conference Series.
- Journal Page Range
- p. 455-464.
Conference
- Title
- 8. international symposium on gallium arsenide and related compounds.
- Dates
- 22 - 24 Sep 1980.
- Place
- Vienna, Austria.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13670142
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BRIDGMAN METHOD; CARRIER DENSITY; CARRIER MOBILITY; CHROMIUM; CRYSTAL DOPING; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CZOCHRALSKI METHOD; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HALL EFFECT; ION IMPLANTATION; MONOCRYSTALS; OXYGEN; SELENIUM IONS; SILICON
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; CRYSTALS; ELEMENTS; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; METALS; MOBILITY; NONMETALS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS; TRANSITION ELEMENTS