Published 1998
| Version v1
Book
X-ray absorption fine structure (XAFS) studies of cobalt silicide thin films
- 1. Univ. of Western Ontario, London, Ontario (Canada)
Description
Cobalt silicide thin films, prepared on Si(100) wafers, have been studied by X-ray absorption near edge structures (XANES) at the Si K-, L2,3- and Co K-edges utilizing both total electron (TEY) and fluorescence yield (FLY) detection as well as extended X-ray absorption fine structure (EXAFS) at the Co K-edge. Samples made using DC sputter deposition on clean Si surfaces and MBE were studied along with a bulk CoSi2 sample. XANES and EXAFS provide information about the electronic structure and morphology of the films. It was found that the films studied have essentially the same structure as bulk CoSi2. Both the spectroscopy and materials characterization aspects of XAFS (X-ray absorption fine structures) are discussed
Additional details
Publishing Information
- Publisher
- Materials Research Society
- Imprint Place
- Warrendale, PA (United States)
- ISBN
- 1-55899-430-0
- Imprint Title
- Applications of synchrotron radiation techniques to materials science 4
- Imprint Pagination
- 398 p.
- Series
- Materials Research Society symposium proceedings, Volume 524
- Journal Page Range
- p. 273-277
- ISSN
- 0272-9172
Conference
- Title
- Spring meeting of the Materials Research Society
- Dates
- 13-17 Apr 1998
- Place
- San Francisco, CA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30021437
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- COBALT SILICIDES; ELECTRONIC STRUCTURE; EXPERIMENTAL DATA; FINE STRUCTURE; MORPHOLOGY; RADIATION ABSORPTION ANALYSIS; THIN FILMS; X-RAY FLUORESCENCE ANALYSIS
- Descriptors DEC
- CHEMICAL ANALYSIS; COBALT COMPOUNDS; DATA; FILMS; INFORMATION; NONDESTRUCTIVE ANALYSIS; NUMERICAL DATA; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; X-RAY EMISSION ANALYSIS
Optional Information
- Funding organization
- Natural Sciences and Engineering Research Council of Canada, Ottawa, ON (Canada)
- Secondary number(s)
- CONF-980405--