Published January 14, 2004
| Version v1
Journal article
Co-ordination between the Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors in the diffusion region
Creators
- 1. Institute of Theoretical Physics, Chinese Academy of Sciences, PO Box 2735, Beijing 100080 (China)
- 2. Bartol Research Institute, University of Delaware, Newark, DE 19716 (United States)
Description
We consider the effect of the Rashba spin-orbital interaction and space charge in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction where the spin current is severely affected by the doping, band structure and charge screening in the semiconductor. In the diffusion region, if the resistance of the tunnelling barriers is comparable to the semiconductor resistance, the magnetoresistance of this junction can be greatly enhanced under appropriate doping by the co-ordination between the Rashba effect and the screened Coulomb interaction in non-equilibrium transport processes within the Hartree approximation
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/16/125/cm4_1_012.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/16/125/cm4_1_012.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/16/1/012;
- PII
- S0953-8984(04)70754-7;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 16
- Journal Issue
- 1
- Journal Page Range
- p. 125-134
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35023193
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIFFUSION; ELECTRONIC STRUCTURE; HARTREE-FOCK METHOD; HETEROJUNCTIONS; INTERFACES; JAHN-TELLER EFFECT; L-S COUPLING; MAGNETORESISTANCE; SPIN ORIENTATION
- Descriptors DEC
- CALCULATION METHODS; COUPLING; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INTERMEDIATE COUPLING; ORIENTATION; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS