Published January 2013 | Version v1
Journal article

Indentation responses of piezoelectric layered half-space

  • 1. Department of Civil Engineering, Zhejiang University, Zijingang Campus, Hangzhou 310058, People's Republic of China (China)
  • 2. Department of Engineering Mechanics, Zhejiang University, Yuquan Campus, Hangzhou 310027, People's Republic of China (China)

Description

A method for solving a class of normal frictionless indentation problems in a multilayered piezoelectric half-space is proposed. The half-space is deformed by a rigid axisymmetric indenter that includes flat-ended cylinder, cone and sphere shapes. Three different interfacial models, i.e. perfectly bonded, frictionless contact and spring-like models, are investigated. Both insulating and conducting indenters are considered. The complete solution in the half-space is obtained by integrating the elastic and electric displacements due to a point load and a point charge with unknown distribution functions over the contact area. These distribution functions are to be determined by using the boundary conditions of the contact problems. The numerical results of the indentation responses of a piezoelectric thin film in contact with a piezoelectric half-space are given as an example of the proposed method. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0964-1726/22/1/015007

Additional details

Publishing Information

Journal Title
Smart Materials and Structures (Print)
Journal Volume
22
Journal Issue
1
Journal Page Range
[16 p.]
ISSN
0964-1726

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44126737
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BOUNDARY CONDITIONS; DISTRIBUTION FUNCTIONS; LAYERS; PIEZOELECTRICITY; POINT CHARGE; SHAPE; SPHERES; THIN FILMS
Descriptors DEC
ELECTRIC CHARGES; ELECTRICITY; FILMS; FUNCTIONS