Dielectric and magnetic properties of nanoporous nickel doped zinc oxide for spintronic applications
Creators
- 1. Department of Chemistry, Mepco Schlenk Engineering College, Sivakasi, Tamilnadu (India)
- 2. Department of Physics, Indian Institute of Technology, Patna, Bihar (India)
- 3. Department of Physics, Ramco Institute of Technology, Rajapalayam, Tamilnadu (India)
- 4. Faculty of Allied Health Sciences, Chettinad Academy of Research and Education (CARE), Chettinad Health City, Kelambakkam, Chennai 603103, Tamilnadu (India)
- 5. Nanomaterials Laboratory, Department of Mechatronics Engineering, Jeju National University, Jeju 63243 (Korea, Republic of)
- 6. Chemistry Division, School of Advanced Sciences, Vellore Institute of Technology, Chennai Campus, Chennai 600127, Tamilnadu (India)
- 7. Department of Electronics and Communication Engineering, Indian Institute of Information Technology Design and Manufacturing, Chennai 600127, Tamilnadu (India)
- 8. Research Institute of Electronics, Shizuoka University, Hamamatsu 4328011 (Japan)
Description
Nanoporous Ni doped ZnO is prepared in the configuration NiO(x)·ZnO(1−x) (x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10) using sol-gel combustion technique. The crystal structure, morphology, elemental composition, magnetic and dielectric properties of NiO(x)·ZnO(1−x) are determined from XRD, FE-SEM with EDX, VSM and LCRQ meter, respectively. XRD investigation confirms the presence of wurtzite hexagonal structure of ZnO in all the prepared samples. At low doping level of Ni, the crystal structure remains identical to ZnO meanwhile some structural imperfection is observed on increasing the doping concentration. FESEM images indicate the occurrence of nanopores distributed uniformly in the NiO(x)·ZnO(1−x). Magnetic characteristics of the samples found enhanced with increasing dopant concentration till x = 0.06. The possible explanation for the origin of the dielectric and magnetic behaviours of NiO(x)·ZnO(1−x) are discussed. Based on the obtained results, NiO(0.06)·ZnO(0.94) is a suitable candidate for Diluted Magnetic Semiconductors for spintronic applications.
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2019.04.032;
- PII
- S0304885319301003;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 485
- Journal Page Range
- p. 27-35
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55025163
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMBUSTION; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DOPED MATERIALS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MORPHOLOGY; NICKEL; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; VIBRATING SAMPLE MAGNETOMETERS; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; MAGNETOMETERS; MATERIALS; MEASURING INSTRUMENTS; METALS; MICROSCOPY; OXIDATION; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR MATERIALS; THERMOCHEMICAL PROCESSES; TRANSITION ELEMENTS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.