Structure of ceramic surfaces modified by ion-beam techniques

A wide variety of structures are produced by ion implantation in ceramics. Random (substitutional and interstitial site occupancy) solid solutions with concentrations of solute that exceed the solubility limit can be produced in Al2O3. The changes that occur during annealing are complex and sometimes unpredictable. Silicon carbide becomes amorphous in a manner analogous to Si for ion fluences that produce more than 0.2 dpa damage. Light (N) and heavy (Cr) ions produce similar results if the fluence is scaled to damage energy deposited. Because of mass differences in the ions, two damage regions are developed in TiB2. The structure remains crystalline to very high damage levels. These structural alterations cause changes in the surface mechanical properties. Since virtually any chemical species can be implanted, one can independently control structural damage and chemical effects. When coupled with selective annealing, this technique has the potential for producing a wide range of surface structures and properties. 8 figures