Published November 12, 1975 | Version v1
Journal article Metadata-only

Channeling of relativistic electrons in silicon crystal

Creators

  • 1. Tomskij Politekhnicheskij Inst. (USSR). Inst. Yadernoj Fiziki, Ehlektroniki i Avtomatiki

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Каналирование релятивисцких электронов в кристалле кремния

Publishing Information

Journal Title
Pis'ma Zh. Tekh. Fiz.
Journal Volume
1
Journal Issue
2
Series
Pis'ma Zh. Tekh. Fiz.
Journal Page Range
986-989

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
7269660
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANGULAR DISTRIBUTION; ELECTRON BEAMS; ELECTRON CHANNELING; ELECTRONS; GRAIN ORIENTATION; MEV RANGE 01-10; MONOCRYSTALS; RELATIVISTIC RANGE; SILICON; THICKNESS
Descriptors DEC
BEAMS; CHANNELING; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; DISTRIBUTION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; LEPTON BEAMS; LEPTONS; MEV RANGE; MICROSTRUCTURE; ORIENTATION; PARTICLE BEAMS; SEMIMETALS

Optional Information

Notes
6 refs.; letter-to-the-editor.