Diagnostics of the quantum well heterostructures by the capacitive photovoltage spectroscopy method

Paper studies the peculiarities of spectra of capacitive photovoltage and photoluminescence of GaAs/InGaAs heterostructures with single and double asymmetric quantum wells linked with dimensional quantization and effect of solid solution composition heterogeneities on spectra. Dependence of photosensitivity and quantum efficiency on parameters of quantum wells and on their location as to the surface barrier is determined. Spectroscopy of capacitive photovoltage is shown to be efficient tool to be used for diagnostics of heterostructure with relatively shallow quantum wells. 18 refs.; 6 figs