Published September 1989
| Version v1
Journal article
Thermal resistivity of quaternary solid solutions InGaAsSb and GaAlAsSb lattice-matched to GaSb
- 1. Akademie der Wissenschaften der DDR, Berlin (German Democratic Republic). Zentralinstitut fuer Optik und Spektroskopie
- 2. AN SSSR, Moscow (USSR). Fizicheskij Inst.
Description
The thermal resistivities of the quaternary solid solutions GaInAsSb and AlGaAsSb lattice-matched to GaSb were measured. A dynamic method was used for a simple and fast investigation. It was shown that in the range of composition of optoelectronic devices based on GaSb the thermal resistivities of the quaternary compounds are 3 - 4 times larger than those of the GaSb substrate. (author)
Additional details
Publishing Information
- Journal Title
- Crystal Research and Technology
- Journal Volume
- 24
- Journal Issue
- 9
- Series
- Cryst. Res. Technol.
- Journal Page Range
- K161-K166
- ISSN
- 0232-1300
- CODEN
- CRTED
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 21018198
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ANTIMONIDES; ARSENIC COMPOUNDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; QUATERNARY ALLOY SYSTEMS; SEMICONDUCTOR LASERS; SOLID SOLUTIONS; SUBSTRATES; THERMODYNAMIC PROPERTIES
- Descriptors DEC
- ALLOY SYSTEMS; AMPLIFIERS; ANTIMONY COMPOUNDS; DISPERSIONS; EQUIPMENT; HOMOGENEOUS MIXTURES; LASERS; MIXTURES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SOLUTIONS
Optional Information
- Notes
- Short note.