Published August 1, 2000 | Version v1
Journal article

The crystal perfection improvement of Y1Ba2Cu3O7-x thin films by afterglow plasma process

  • 1. Univ. of Electron. Sci. and Technol., Chengdu (China). Inst. of Inf. Mater. Sci. and Eng.
  • 2. Institut fuer Nukleare Festkoerperphysik, Forschungszentrum Karlsruhe, P.O. Box 3640, D-76021, Karlsruhe (Germany)

Description

In this article, we report the growth of purely (001) oriented single crystal Y1Ba2Cu3O7-x thin films with excellent crystal perfection by afterglow plasma sputtering. Because of little energetic ion and electron bombardment, the crystal perfection of Y1Ba2Cu3O7-x thin films was significantly improved. The full width at half-maximum value of the rocking curve around the (005) diffraction peak of the films is 0.12 . The experiments demonstrate that the afterglow plasma process is very appropriate for the preparation of high-quality Y1Ba2Cu3O7-x thin films, which are very sensitive to ion bombardment effects. (orig.)

Additional details

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
371
Journal Issue
1-2
Journal Page Range
p. 231-234
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Notes
8 refs.