Published July 1990
| Version v1
Journal article
Characteristics of the behavior of radiation defects in AlxGa1-xAs/GaAs structures
- 1. A.F. Ioffe Physicotechnical Institute, Leningrad (USSR)
Description
Solar cells used in deep space suffer degradation. High-energy protons play an important role in this process. The authors report the results of an investigation of deep-level radiation defects created by irradiation of AlxGa1-xAs/GaAs solar cells with a monoenergetic beam of 6.7-MeV protons incident at an angle of 45 degree. The radiation defects were investigated by the method of deep level transient spectroscopy (DLTS)
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors (English Translation)
- Journal Volume
- 24
- Journal Issue
- 7
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 830-831
- ISSN
- 0038-5700
- CODEN
- SPSEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22042839
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- COLLISIONS; ENERGY LEVELS; EXPERIMENTAL DATA; MEASURING METHODS; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; PROTON CHANNELING; PROTONS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SPACECRAFT POWER SUPPLIES; SPECTROSCOPY; TRANSIENTS
- Descriptors DEC
- BARYONS; CATIONS; CHANNELING; CHARGED PARTICLES; DATA; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ENERGY RANGE; EQUIPMENT; FERMIONS; HADRONS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; INFORMATION; IONS; MATERIALS; MEV RANGE; NUCLEONS; NUMERICAL DATA; POWER SUPPLIES; RADIATION EFFECTS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).