Noble gas atoms as deep centres in silicon

The luminescence spectra of silicon implanted with argon ions of 200 keV and annealed at 25, 200, 300, and 700 0C are studied and compared with luminescence bands of Si containing Kr, Ar, Ne, and He. The form and spectral distribution of phonon-side bands, the high-resolution spectra of the electron-vibronic bands with zero-phonon lines and piezospectroscopic measurements indicate the existence of chemical bonds between silicon and noble gas atoms