Published 1987 | Version v1
Book Metadata-only

Metal/amorphous silicon multilayer x-ray sensor

Creators

  • 1. Toshiba Corp., Kawasaki, Kanagawa (Japan). Research and Development Center

Description

A metal/amorphous silicon multilayer has been applied to a high energy (50-100 keV) x-ray sensor. The absorption of x-ray photons mainly occurs in metal layers, while amorphous silicon layers play a role of generating electron-hole pairs by the electrons emitted from the metal layers. The applicability of this novel x-ray sensor was confirmed by computer simulations and preliminary experiments. Besides x-rays, there are potential applications for various other radiations. (author)

Additional details

Publishing Information

Publisher
Institute of Electrical Engineers of Japan.
Imprint Place
Tokyo (Japan)
Imprint Title
Transducers '87, digest of technical papers
Imprint Pagination
871 p.
Journal Page Range
p. 262-266.

Conference

Title
4. international conference on solid-state sensors and actuators.
Dates
3-5 Jun 1987.
Place
Tokyo (Japan).

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
20020384
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; ANGULAR DISTRIBUTION; EFFICIENCY; LAYERS; METALS; MOLYBDENUM; PHOTOEMISSION; SI SEMICONDUCTOR DETECTORS; SIMULATION; TANTALUM; X-RAY DETECTION
Descriptors DEC
DETECTION; DISTRIBUTION; ELEMENTS; EMISSION; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; SECONDARY EMISSION; SEMICONDUCTOR DETECTORS; TRANSITION ELEMENTS