Published 2005
| Version v1
Journal article
Cross-section scanning tunneling microscopy on nitrogen-containing InAs/GaAs heterostructures
Creators
- 1. Technische Univ. Berlin, Inst. fuer Festkoerperphysik, Berlin (Germany)
- 2. Infineon Technologies, Corporate Research Photonics, Muenchen (Germany)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Querschnitts-Rastertunnelmikroskopie an stickstoffhaltigen InAs/GaAs-Heterostrukturen
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 40
- Journal Issue
- 2
- Journal Page Range
- p. 515
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics since Albert Einstein
- Original Conference Title
- Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein
- Acronym
- 2005 annual conference of the German Physical Society (DPG) during the World year of physics
- Dates
- 4-9 Mar 2005
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 36050977
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; DOPED MATERIALS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; NITROGEN ADDITIONS; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACES
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; PNICTIDES; SEMICONDUCTOR JUNCTIONS