High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy
Creators
- 1. Department of Electrical Engineering, Ohio State University, Columbus, Ohio 43210 (United States)
- 2. Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States)
- 3. Department of Materials Science, University of California, Santa Barbara, California 93106 (United States)
- 4. NASA Glenn Research Center, Cleveland, Ohio 44135 (United States)
Description
Relaxed, high-quality, compositionally step-graded InAsyP1-y layers with an As composition of y=0.4, corresponding to a lattice mismatch of ∼1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to be nearly fully relaxed observed by triple axis x-ray diffraction, and plan-view transmission electron microscopy revealed an average threading dislocations of 4x106 cm-2 within the InAs0.4P0.6 cap layer. Extremely ordered crosshatch morphology was observed with very low surface roughness (3.16 nm) compared to cation-based In0.7Al0.3As/InxAl1-xAs/InP graded buffers (10.53 nm) with similar mismatch and span of lattice constants on InP. The results show that InAsyP1-y graded buffers on InP are promising candidates as virtual substrates for infrared and high-speed metamorphic III-V devices
Additional details
Identifiers
- DOI
- 10.1063/1.1572476;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 19
- Journal Page Range
- p. 3212-3214
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35037689
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DISLOCATIONS; INDIUM ARSENIDES; INDIUM SULFIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; STRESS RELAXATION; STRESSES; SUBSTRATES; SURFACES; THIN FILMS; TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; FILMS; INDIUM COMPOUNDS; LINE DEFECTS; MATERIALS; MICROSCOPY; PNICTIDES; RELAXATION; SCATTERING; SULFIDES; SULFUR COMPOUNDS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.