Published 2004 | Version v1
Miscellaneous Metadata-only

GaAs-surface contamination removal using a mass separated hydrogen board ion beam at low substrate temperature

Creators

  • 1. Leibniz-Institutfur Oberflachenmodifizierung, Permoserstr. 15, D-04318 Leipzig (Germany)

Description

By using low energy (300 eV) bombardment of a mass separated hydrogen broad ion beam at a surface temperature (125 degree c) we obtain contamination free GaAs surfaces, which is hard to achieve by conventional cleaning. By these cleaning processes we get a damage-free GaAs surface. The surface chemistry of the GaAs-contamination removal (native oxide and carbon) using this new technique has been investigated with the help of X-ray photoelectron spectroscopy (XPS). Ga and As stoichiometry is kept after the cleaning procedure

Part of:
Proceedings of the the Fifth Conference and Workshop on Cyclotrons and Applications (CCW,03)

Additional details

Publishing Information

Imprint Title
Proceedings of the Fifth Conference and Workshop on Cyclotrons and Applications (CCW,03)
Imprint Pagination
216 p.
Journal Page Range
p. 103-115
Report number
INIS-EG--184

Conference

Title
5. Conference and Workshop on Cyclotrons and Applications
Acronym
CCW,03
Dates
22-26 Feb 2003
Place
Cairo (Egypt)

INIS

Country of Publication
Egypt
Country of Input or Organization
Egypt
INIS RN
37057738
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
ARSENIDES; CONTAMINATION; ENERGY RANGE; GALLIUM; HYDROGEN IONS; ION BEAMS; REMOVAL; STOICHIOMETRY; SURFACE CLEANING; TEMPERATURE RANGE; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
ARSENIC COMPOUNDS; BEAMS; CHARGED PARTICLES; CLEANING; ELECTRON SPECTROSCOPY; ELEMENTS; IONS; METALS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; SPECTROSCOPY; SURFACE FINISHING

Optional Information