Influence of isovalent impurities on defect formation in InAs single crsytals

The influence of isovalent impurities (IVI) of Sb and Ga on electrophysical properties, type and concentration of intrinsic point defects and dislocations density in InAs monocrystals is studied. It is shown that with increase of IVI alloying level the density and lattice parameter are substantially changed, an important role being played by the nature of alloying addition and the form of its implantation into the melt. The evaluation of difference concentration of intrinsic point defects as well as density and lattice parameter on the assumption of formation by alloying additions of multicomponent solid substitution solutions. The IVI influence of dislocations density in InAs monocrystals has been found out