Published October 16, 2006
| Version v1
Journal article
Dissociation of super-dislocations and the stacking fault energy in TiAl based alloys with Nb-doping
- 1. Laboratory of Solid State Microstructures, Nanjing University, Han Kou Road 22, Nanjing 210093 (China)
- 2. Institut fuer Materialphysik der Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)
Description
Dissociations of super-dislocations in γ-TiAl in Nb-doped Ti-48 at.% Al-1 at.% Nb and Ti-48 at.% Al-10 at.% Nb have been studied by high resolution transmission electron microscopy (HRTEM) and weak beam transmission electron microscopy (TEM). The SISF energy was calculated to be 63 mJ/m2 in Ti-48 at.% Al-1 at.% Nb and 34 mJ/m2 in Ti-48 at.% Al-10 at.% Nb according to the dissociation width, respectively. Consequently, it is concluded that Nb-addition can decrease the SF energy significantly, which contribute obviously to the strengthening effect induced by Nb-doping
Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2006.05.021;
- PII
- S0375-9601(06)00742-0;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 358
- Journal Issue
- 3
- Journal Page Range
- p. 231-235
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38067181
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; DISLOCATIONS; DOPED MATERIALS; INTERMETALLIC COMPOUNDS; NIOBIUM ALLOYS; STACKING FAULTS; TITANIUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; LINE DEFECTS; MATERIALS; MICROSCOPY; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.