Published January 2004
| Version v1
Journal article
Test methods of total dose effects in very large scale integrated circuits
Creators
- 1. Northwest Inst. of Nuclear Technology, Xi'an (China)
Description
A kind of test method of total dose effects (TDE) is presented for very large scale integrated circuits (VLSI). The consumption current of devices is measured while function parameters of devices (or circuits) are measured. Then the relation between data errors and consumption current can be analyzed and mechanism of TDE in VLSI can be proposed. Experimental results of 60Co γ TDEs are given for SRAMs, EEPROMs, FLASH ROMs and a kind of CPU
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 53
- Journal Issue
- 1
- Journal Page Range
- p. 194-199
- ISSN
- 1000-3290
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 36026750
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COBALT 60; ELECTRIC CURRENTS; ENERGY CONSUMPTION; GAMMA RADIATION; INTEGRATED CIRCUITS; MEASURING METHODS; MEMORY DEVICES; MICROPROCESSORS; PARAMETRIC ANALYSIS; RADIATION DOSES; RADIATION EFFECTS; TESTING
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; CURRENTS; DOSES; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MICROELECTRONIC CIRCUITS; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; RADIATIONS; RADIOISOTOPES; YEARS LIVING RADIOISOTOPES