Published October 2013 | Version v1
Journal article

Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

  • 1. School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia)
  • 2. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia)
  • 3. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)
  • 4. Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia)
  • 5. Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia)

Description

A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed

Availability note (English)

Available from http://dx.doi.org/10.1016/j.scriptamat.2013.07.020

Additional details

Identifiers

DOI
10.1016/j.scriptamat.2013.07.020;
PII
S1359-6462(13)00375-8;

Publishing Information

Journal Title
Scripta Materialia
Journal Volume
69
Journal Issue
8
Journal Page Range
p. 638-641
ISSN
1359-6462
CODEN
SCMAF7

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.