Magnetic shape anisotropy calculations of Fe nanostructures at the Si/Fe(1 1 1) interface
- 1. IS2M - LRC CNRS 7228 - UHA, 4 rue des freres Lumiere, 68093 Mulhouse cedex (France)
- 2. FST - UHA, 4 rue des freres Lumiere, 68093 Mulhouse cedex (France)
Description
The influence of Si capping layers on the magnetic properties of thin Fe films grown on Si(1 1 1) has been studied by means of shape anisotropy calculations. Fe surface morphology simulations are realized using experimental STM data. Surface modifications induced by the interaction between the Si overlayer and the Fe surface are performed in agreement with the model proposed in a previous work by Stephan et al. [J. Magn. Mater. 293 (2005) 746]. Calculations of the uniaxial anisotropy energy constant Ku are then performed on the modified Fe surface morphology for different Si deposition geometries as proposed in the model. The relevant data deduced by this method such as anisotropy constants and their related easy axis direction, are directly compared to the experimental ones obtained by ex situ magneto-optical Kerr effect (MOKE) measurements at room temperature using the transverse bias initial inverse susceptibility and torque (TBIIST) method. We show that a very good agreement between those results leads to a confirmation of the proposed model.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jmmm.2009.07.028Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2009.07.028;
- PII
- S0304-8853(09)00743-4;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 321
- Journal Issue
- 22
- Journal Page Range
- p. 3742-3746
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41010104
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; DEPOSITION; EPITAXY; FILMS; INTERFACES; IRON; KERR EFFECT; LAYERS; MAGNETIC PROPERTIES; MORPHOLOGY; NANOSTRUCTURES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SIMULATION; SURFACES; TEMPERATURE RANGE 0273-0400 K; TORQUE
- Descriptors DEC
- CRYSTAL GROWTH METHODS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; MICROSCOPY; PHYSICAL PROPERTIES; SEMIMETALS; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.