Published September 27, 1979
| Version v1
Journal article
Effects of ion implantation on deep levels in GaAs
Creators
- 1. Nevada Univ., Las Vegas (USA). Dept. of Physics and Astrophysical Sciences
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Electron. Lett.
- Journal Volume
- 15
- Journal Issue
- 20
- Series
- Electron. Lett.
- Journal Page Range
- 619-621
- ISSN
- 0013-5194
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11502154
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- DEPTH; GALLIUM ARSENIDES; IMPURITIES; ION IMPLANTATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON IONS; SILICON 29; SPATIAL DISTRIBUTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; EVEN-ODD NUCLEI; GALLIUM COMPOUNDS; IONS; ISOTOPES; LIGHT NUCLEI; NUCLEI; SILICON ISOTOPES; STABLE ISOTOPES
Optional Information
- Notes
- Brief note.